<?xml version="1.0" encoding="utf-8" standalone="yes"?><rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom" xmlns:content="http://purl.org/rss/1.0/modules/content/"><channel><title>Japanese Journal of Applied Physics on Jinkwan Kwoen</title><link>https://www.jinkwan.com/tags/japanese-journal-of-applied-physics/</link><description>Recent content in Japanese Journal of Applied Physics on Jinkwan Kwoen</description><generator>Hugo</generator><language>en-US</language><lastBuildDate>Sat, 29 Nov 2025 12:06:55 +0900</lastBuildDate><atom:link href="https://www.jinkwan.com/tags/japanese-journal-of-applied-physics/index.xml" rel="self" type="application/rss+xml"/><item><title>Growth and application of quantum dot lasers for silicon photonic integrated circuits</title><link>https://www.jinkwan.com/growth-and-application-of-quantum-dot-lasers-for-silicon-photonic-integrated-circuits/</link><pubDate>Sat, 29 Nov 2025 12:06:55 +0900</pubDate><guid>https://www.jinkwan.com/growth-and-application-of-quantum-dot-lasers-for-silicon-photonic-integrated-circuits/</guid><description>&lt;p&gt;[zotpressInText item=&amp;quot;{4888295:6LR7Z6GU}&amp;quot;]&lt;/p&gt;</description></item><item><title>Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer</title><link>https://www.jinkwan.com/elimination-of-anti-phase-boundaries-in-a-gaas-layer-directly-grown-on-an-on-axis-si001-substrate-by-optimizing-an-algaas-nucleation-layer/</link><pubDate>Tue, 05 Mar 2019 10:00:00 +0900</pubDate><guid>https://www.jinkwan.com/elimination-of-anti-phase-boundaries-in-a-gaas-layer-directly-grown-on-an-on-axis-si001-substrate-by-optimizing-an-algaas-nucleation-layer/</guid><description>&lt;div class="paper-citation"&gt;
&lt;div class="csl-bib-body" style="line-height: 2; "&gt;
&lt;div class="csl-entry" style="clear: left; "&gt;
&lt;div class="csl-left-margin" style="float: left; padding-right: 0.5em; text-align: right; width: 1em;"&gt;1. &lt;/div&gt;&lt;div class="csl-right-inline" style="margin: 0 .4em 0 1.5em;"&gt;Kwoen, J., Lee, J., Watanabe, K. &amp;amp; Arakawa, Y. Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer. &lt;i&gt;Jpn. J. Appl. Phys.&lt;/i&gt; &lt;b&gt;58&lt;/b&gt;, 5 (2019).&lt;/div&gt;
&lt;/div&gt;
&lt;/div&gt;
&lt;/div&gt;</description></item></channel></rss>