Growth and application of quantum dot lasers for silicon photonic integrated circuits
[zotpressInText item="{4888295:6LR7Z6GU}"]
Japanese Journal of Applied Physics
Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer
1. Kwoen, J., Lee, J., Watanabe, K. & Arakawa, Y. Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer. Jpn. J. Appl. Phys. 58, 5 (2019).