Electronics Letters on Jinkwan Kwoen

C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping

Sun, 25 May 2025 09:00:00 +0900

C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping

Kwoen, J., Jung, J., Kakuda, M. & Arakawa, Y. C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping. Electron. Lett. 61, 1–4 (2025).

All III‐arsenide low threshold InAs quantum dot lasers on InP(001)

Tue, 01 Aug 2023 10:00:00 +0900

Kwoen, J., Morais, N., Zhan, W., Iwamoto, S. & Arakawa, Y. All III‐arsenide low threshold InAs quantum dot lasers on InP(001). Electron. Lett. 59, e12920 (2023).

E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer

Thu, 01 Jul 2021 10:00:00 +0900

Kwoen, J., Zhan, W. & Arakawa, Y. E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer. Electron. Lett. 57, 567–568 (2021).

InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates

Thu, 29 Nov 2018 10:00:00 +0900

Yoshikawa, H. et al. InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates. Electron. Lett. 54, 1395–1397 (2018).