Electronics Letters

C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping

C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping 1. Kwoen, J., Jung, J., Kakuda, M. & Arakawa, Y. C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping. Electron. Lett. 61, 1–4 (2025).

All III‐arsenide low threshold InAs quantum dot lasers on InP(001)

1. Kwoen, J., Morais, N., Zhan, W., Iwamoto, S. & Arakawa, Y. All III‐arsenide low threshold InAs quantum dot lasers on InP(001). Electron. Lett. 59, e12920 (2023).

E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer

1. Kwoen, J., Zhan, W. & Arakawa, Y. E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer. Electron. Lett. 57, 567–568 (2021).

InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates

1. Yoshikawa, H. et al. InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates. Electron. Lett. 54, 1395–1397 (2018).