[태그:] Electronics Letters
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C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping
C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping
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All III‐arsenide low threshold InAs quantum dot lasers on InP(001)
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E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer
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InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates