Jinkwan Kwoen

Ultrastrong coupling between magnetoplasmons and cyclotron harmonics in terahertz resonator-quantum point contact integrated systems

Thu, 05 Feb 2026 00:00:21 +0900

Communications Physics

Ultrastrong Light–Matter Coupling in Near-Field Coupled Split-Ring Resonators Revealed by Photocurrent Spectroscopy

Tue, 27 Jan 2026 00:00:24 +0900

Ultrastrong Light–Matter Coupling in Near-Field Coupled Split-Ring Resonators Revealed by Photocurrent Spectroscopy

Growth and application of quantum dot lasers for silicon photonic integrated circuits

Sat, 29 Nov 2025 12:06:55 +0900

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C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping

Sun, 25 May 2025 09:00:00 +0900

C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping

Kwoen, J., Jung, J., Kakuda, M. & Arakawa, Y. C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping. Electron. Lett. 61, 1–4 (2025).

Wide-range Emission Wavelength Control of InAs Quantum Dots by Changing Indium Composition in InAlGaAs Capping Layer

Tue, 01 Apr 2025 10:00:00 +0900

Chiral terahertz photocurrent in quantum point contact–split ring resonator coupled systems in the quantum Hall regime

Thu, 20 Mar 2025 10:00:13 +0900

Local LLM 모델로 VS Code 에서 코드 어시스트 쓰기

Fri, 15 Nov 2024 16:42:43 +0900

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{
"models": [
{
"title": "CodeGemma",
"provider": "ollama",
"model": "codegemma"
}
],
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}

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Profile

Sat, 09 Nov 2024 11:33:30 +0900

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Works

Thu, 31 Oct 2024 10:30:15 +0900

More than convergence

III-V on Si

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Next generation light sources

Quantum Dots

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Beyond skilled engineer

ML for MBE

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In situ monitoring of quantum dot growth using a magnification inferred curvature method

Fri, 25 Oct 2024 10:00:00 +0900

第1著者・責任著者
研究提案・計画・設計・現場遂行・サンプル成長・測定など全般に寄与

Kwoen, J. & Arakawa, Y. In situ monitoring of quantum dot growth using a magnification inferred curvature method. Appl. Phys. Lett. 125, 172108 (2024).

Coherent Interaction of a Few-Electron Quantum Dot with a Terahertz Optical Resonator

Fri, 09 Feb 2024 10:00:00 +0900

Kuroyama, K., Kwoen, J., Arakawa, Y. & Hirakawa, K. Coherent Interaction of a Few-Electron Quantum Dot with a Terahertz Optical Resonator. Phys. Rev. Lett. 132, 066901 (2024).

Hybrid distributed Bragg reflector laser on Si with a transfer printed InAs/GaAs quantum dot amplifier

Mon, 29 Jan 2024 10:00:00 +0900

Morais, N. et al. Hybrid distributed Bragg reflector laser on Si with a transfer printed InAs/GaAs quantum dot amplifier. Opt. Express 32, 4295–4304 (2024).

Electrical Detection of Ultrastrong Coherent Interaction between Terahertz Fields and Electrons Using Quantum Point Contacts

Wed, 01 Nov 2023 10:00:00 +0900

Kuroyama, K., Kwoen, J., Arakawa, Y. & Hirakawa, K. Electrical Detection of Ultrastrong Coherent Interaction between Terahertz Fields and Electrons Using Quantum Point Contacts. Nano Lett. 23, 11402–11408 (2023).

高電子移動度トランジスター(HEMT)構造の結晶成長を担当

Enhanced temperature stability of threshold current of InAs/GaAs quantum dot lasers by AlGaAs lateral potential barrier layers

Mon, 11 Sep 2023 10:00:00 +0900

Kakuda, M., Morais, N., Kwoen, J. & Arakawa, Y. Enhanced temperature stability of threshold current of InAs/GaAs quantum dot lasers by AlGaAs lateral potential barrier layers. Opt. Express 31, 31243–31252 (2023).

All III‐arsenide low threshold InAs quantum dot lasers on InP(001)

Tue, 01 Aug 2023 10:00:00 +0900

Kwoen, J., Morais, N., Zhan, W., Iwamoto, S. & Arakawa, Y. All III‐arsenide low threshold InAs quantum dot lasers on InP(001). Electron. Lett. 59, e12920 (2023).

Multiclass classification of reflection high-energy electron diffraction patterns using deep learning

Thu, 01 Sep 2022 10:00:00 +0900

Kwoen, J. & Arakawa, Y. Multiclass classification of reflection high-energy electron diffraction patterns using deep learning. J. Cryst. Growth 593, 126780 (2022).

E‐Band InAs/GaAs Trilayer Quantum Dot Lasers

Tue, 05 Oct 2021 10:00:00 +0900

Zhan, W., Kwoen, J., Imoto, T., Iwamoto, S. & Arakawa, Y. E‐Band InAs/GaAs Trilayer Quantum Dot Lasers. Phys. Status Solidi A 2100419 (2021) doi:10.1002/pssa.202100419.

InAs/InGaAs Quantum Dot Lasers on Multi-Functional Metamorphic Buffer Layers

Mon, 30 Aug 2021 10:00:00 +0900

Kwoen, J., Imoto, T. & Arakawa, Y. InAs/InGaAs Quantum Dot Lasers on Multi-Functional Metamorphic Buffer Layers. Opt. Express 29, 29378 (2021).

E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer

Thu, 01 Jul 2021 10:00:00 +0900

Kwoen, J., Zhan, W. & Arakawa, Y. E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer. Electron. Lett. 57, 567–568 (2021).

Classification of Reflection High-Energy Electron Diffraction Pattern Using Machine Learning

Wed, 05 Aug 2020 10:00:00 +0900

Kwoen, J. & Arakawa, Y. Classification of Reflection High-Energy Electron Diffraction Pattern Using Machine Learning. Cryst. Growth Des. 20, 5289–5293 (2020).

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Fri, 01 May 2020 10:00:00 +0900

Hiraishi, Y. et al. The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation. Phys. Status Solidi A 217, 1900851 (2020).

Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix

Sat, 01 Feb 2020 10:00:00 +0900

Zhan, W. et al. Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix. Phys. Status Solidi B 257, 6 (2020).

Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer

Tue, 05 Mar 2019 10:00:00 +0900

Kwoen, J., Lee, J., Watanabe, K. & Arakawa, Y. Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer. Jpn. J. Appl. Phys. 58, 5 (2019).

High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)

Mon, 04 Feb 2019 10:00:00 +0900

Kwoen, J., Jang, B., Watanabe, K. & Arakawa, Y. High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001). Opt. Express 27, 2681–2688 (2019).

InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates

Thu, 29 Nov 2018 10:00:00 +0900

Yoshikawa, H. et al. InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates. Electron. Lett. 54, 1395–1397 (2018).

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)

Mon, 30 Apr 2018 10:00:00 +0900

Kwoen, J. et al. All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001). Opt. Express 26, 11568–11576 (2018).

Growth of high‐quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

Fri, 01 Nov 2013 10:00:00 +0900

Kwoen, J., Watanabe, K., Ota, Y., Iwamoto, S. & Arakawa, Y. Growth of high‐quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates. Phys. Status Solidi C 10, 1496–1499 (2013).

Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique

Sun, 01 Sep 2013 10:00:00 +0900

Kwoen, J., Watanabe, K., Iwamoto, S. & Arakawa, Y. Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique. J. Cryst. Growth 378, 562–565 (2013).