Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer

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Kwoen, J., Lee, J., Watanabe, K. & Arakawa, Y. Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer. Jpn. J. Appl. Phys. 58, 5 (2019).