papers – Jinkwan Kwoen

2025-04-01

Wide-range Emission Wavelength Control of InAs Quantum Dots by Changing Indium Composition in InAlGaAs Capping Layer

📄 Optical Materials Express
2025-03-20

Chiral terahertz photocurrent in quantum point contact–split ring resonator coupled systems in the quantum Hall regime

📄 Physical Review B
2024-10-25

In situ monitoring of quantum dot growth using a magnification inferred curvature method

📄 Applied Physics Letters
2024-02-09

Coherent Interaction of a Few-Electron Quantum Dot with a Terahertz Optical Resonator

📄 Physical Review Letters
2024-01-29

Hybrid distributed Bragg reflector laser on Si with a transfer printed InAs/GaAs quantum dot amplifier

📄 Optics Express
2023-11-01

Electrical Detection of Ultrastrong Coherent Interaction between Terahertz Fields and Electrons Using Quantum Point Contacts

📄 Nano Letters
2023-09-11

Enhanced temperature stability of threshold current of InAs/GaAs quantum dot lasers by AlGaAs lateral potential barrier layers

📄 Optics Express
2023-08-01

All III‐arsenide low threshold InAs quantum dot lasers on InP(001)

📄 Electronics Letters
2022-09-01

Multiclass classification of reflection high-energy electron diffraction patterns using deep learning

📄 Journal of Crystal Growth
2021-10-05

E‐Band InAs/GaAs Trilayer Quantum Dot Lasers

📄 physica status solidi (a)
2021-08-30

InAs/InGaAs Quantum Dot Lasers on Multi-Functional Metamorphic Buffer Layers

📄 Optics Express
2021-07-01

E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer

📄 Electronics Letters
2020-08-05

Classification of Reflection High-Energy Electron Diffraction Pattern Using Machine Learning

📄 Crystal Growth & Design
2020-05-01

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

📄 physica status solidi (a)
2020-02-01

Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix

📄 physica status solidi (b)
2019-03-05

Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer

📄 Japanese Journal of Applied Physics
2019-02-04

High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)

📄 Optics Express
2018-11-29

InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates

📄 Electronics Letters
2018-04-30

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)

📄 Optics Express
2013-11-01

Growth of high‐quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates

📄 physica status solidi (c)
2013-09-01

Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique

📄 Journal of Crystal Growth