InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates

4888295 {4888295:5RQ2XRXJ} 1 nature 50 default 163 https://www.jinkwan.com/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%225RQ2XRXJ%22%2C%22library%22%3A%7B%22id%22%3A4888295%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Yoshikawa%20et%20al.%22%2C%22parsedDate%22%3A%222018-11-29%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%20style%3D%26quot%3Bclear%3A%20left%3B%20%26quot%3B%26gt%3B%5Cn%20%20%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-left-margin%26quot%3B%20style%3D%26quot%3Bfloat%3A%20left%3B%20padding-right%3A%200.5em%3B%20text-align%3A%20right%3B%20width%3A%201em%3B%26quot%3B%26gt%3B1.%26lt%3B%5C%2Fdiv%26gt%3B%26lt%3Bdiv%20class%3D%26quot%3Bcsl-right-inline%26quot%3B%20style%3D%26quot%3Bmargin%3A%200%20.4em%200%201.5em%3B%26quot%3B%26gt%3BYoshikawa%2C%20H.%20%26lt%3Bi%26gt%3Bet%20al.%26lt%3B%5C%2Fi%26gt%3B%20InAs%5C%2FGaAs%20quantum%20dot%20infrared%20photodetectors%20on%20on-axis%20Si%20%28100%29%20substrates.%20%26lt%3Bi%26gt%3BElectron.%20Lett.%26lt%3B%5C%2Fi%26gt%3B%20%26lt%3Bb%26gt%3B54%26lt%3B%5C%2Fb%26gt%3B%2C%201395%26%23×2013%3B1397%20%282018%29.%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%20%20%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22InAs%5C%2FGaAs%20quantum%20dot%20infrared%20photodetectors%20on%20on-axis%20Si%20%28100%29%20substrates%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22H.%22%2C%22lastName%22%3A%22Yoshikawa%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22J.%22%2C%22lastName%22%3A%22Kwoen%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22T.%22%2C%22lastName%22%3A%22Doe%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22M.%22%2C%22lastName%22%3A%22Izumi%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22S.%22%2C%22lastName%22%3A%22Iwamoto%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Y.%22%2C%22lastName%22%3A%22Arakawa%22%7D%5D%2C%22abstractNote%22%3A%22Quantum%20dot%20infrared%20photodetectors%20%28QDIPs%29%20are%20receiving%20attention%20as%20next%20generation%20infrared%20photodetectors%20that%20offer%20high-sensitivity%20and%20high-temperature%20operation.%20The%20realisation%20of%20QDIPs%20on%20silicon%20%28Si%29%20substrates%20offer%20further%20great%20advantages%20in%20terms%20of%20cost%20reduction%20and%20higher-resolution%20focal%20plane%20arrays.%20Indium%20arsenide%5C%2Fgallium%20arsenide%20QDIPs%20grown%20directly%20on%20on-axis%20Si%20%28100%29%20substrates%20are%20demonstrated.%20These%20are%20expected%20to%20further%20reduce%20fabrication%20costs%20by%20utilising%20both%20the%20monolithic%20integration%20of%20QDIPs%20with%20Si%20readout%20integrated%20circuits%20and%20also%20the%20bare%20substrate%20cost%20%28compared%20with%20offcut%20Si%20substrates%29.%20In%20the%20device%2C%20the%20peak%20detectivity%20at%20a%20temperature%20of%2032%20K%20is%20measured%20to%20be%205.8%20%5Cu00d7%20107%20cm%20Hz1%5C%2F2%5C%2FW%20of%206.2%20%5Cu03bcm%20at%20a%20bias%200.6%20V%2C%20with%20a%20corresponding%20responsivity%20of%2027%20mA%5C%2FW.%20This%20result%20indicates%20that%20QD%20structures%20directly%20grown%20on%20on-axis%20Si%20substrates%20are%20very%20promising%20for%20the%20realisation%20of%20high-performance%20QDIPs%20with%20low%20fabrication%20cost.%22%2C%22date%22%3A%222018-11-29%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1049%5C%2Fel.2018.7118%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22https%3A%5C%2F%5C%2Fdigital-library.theiet.org%5C%2Fcontent%5C%2Fjournals%5C%2F10.1049%5C%2Fel.2018.7118%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%220013-5194%2C%201350-911X%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22SWQKNFDG%22%2C%22ARKDRPCF%22%5D%2C%22dateModified%22%3A%222025-05-25T02%3A30%3A15Z%22%7D%7D%5D%7D
1.
Yoshikawa, H. et al. InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates. Electron. Lett. 54, 1395–1397 (2018).