C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping
4888295
{4888295:3JCKMEPB}
1
nature
50
default
531
https://www.jinkwan.com/wp-content/plugins/zotpress/
%7B%22status%22%3A%22success%22%2C%22updateneeded%22%3Afalse%2C%22instance%22%3Afalse%2C%22meta%22%3A%7B%22request_last%22%3A0%2C%22request_next%22%3A0%2C%22used_cache%22%3Atrue%7D%2C%22data%22%3A%5B%7B%22key%22%3A%223JCKMEPB%22%2C%22library%22%3A%7B%22id%22%3A4888295%7D%2C%22meta%22%3A%7B%22creatorSummary%22%3A%22Kwoen%20et%20al.%22%2C%22parsedDate%22%3A%222025-05-26%22%2C%22numChildren%22%3A1%7D%2C%22bib%22%3A%22%26lt%3Bdiv%20class%3D%26quot%3Bcsl-bib-body%26quot%3B%20style%3D%26quot%3Bline-height%3A%202%3B%20%26quot%3B%26gt%3B%5Cn%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-entry%26quot%3B%20style%3D%26quot%3Bclear%3A%20left%3B%20%26quot%3B%26gt%3B%5Cn%20%20%20%20%26lt%3Bdiv%20class%3D%26quot%3Bcsl-left-margin%26quot%3B%20style%3D%26quot%3Bfloat%3A%20left%3B%20padding-right%3A%200.5em%3B%20text-align%3A%20right%3B%20width%3A%201em%3B%26quot%3B%26gt%3B1.%26lt%3B%5C%2Fdiv%26gt%3B%26lt%3Bdiv%20class%3D%26quot%3Bcsl-right-inline%26quot%3B%20style%3D%26quot%3Bmargin%3A%200%20.4em%200%201.5em%3B%26quot%3B%26gt%3BKwoen%2C%20J.%2C%20Jung%2C%20J.%2C%20Kakuda%2C%20M.%20%26amp%3B%20Arakawa%2C%20Y.%20C-band%20All%20III-Arsenide%20InAs%20Quantum%20Dot%20Lasers%20on%20InP%20using%20Low%20Indium%20Composition%20Partial%20Capping.%20%26lt%3Bi%26gt%3BElectron.%20Lett.%26lt%3B%5C%2Fi%26gt%3B%20%26lt%3Bb%26gt%3B61%26lt%3B%5C%2Fb%26gt%3B%2C%201%26%23×2013%3B4%20%282025%29.%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%20%20%26lt%3B%5C%2Fdiv%26gt%3B%5Cn%26lt%3B%5C%2Fdiv%26gt%3B%22%2C%22data%22%3A%7B%22itemType%22%3A%22journalArticle%22%2C%22title%22%3A%22C-band%20All%20III-Arsenide%20InAs%20Quantum%20Dot%20Lasers%20on%20InP%20using%20Low%20Indium%20Composition%20Partial%20Capping%22%2C%22creators%22%3A%5B%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jinkwan%22%2C%22lastName%22%3A%22Kwoen%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Jihye%22%2C%22lastName%22%3A%22Jung%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Masahiro%22%2C%22lastName%22%3A%22Kakuda%22%7D%2C%7B%22creatorType%22%3A%22author%22%2C%22firstName%22%3A%22Yasuhiko%22%2C%22lastName%22%3A%22Arakawa%22%7D%5D%2C%22abstractNote%22%3A%22This%20study%20demonstrates%20the%20growth%20of%20InAs%20quantum%20dots%20%28QDs%29%20on%20InP%20substrates%20using%20an%20all%20group%20III-arsenide%20approach%20in%20molecular%20beam%20epitaxy%20%28MBE%29%20with%20a%20low-indium-composition%20InAlGaAs%20partial%20capping%20layer.%20Real-time%20curvature%20measurements%20confirm%20effective%20strain%20compensation%20during%20multilayer%20QD%20growth%2C%20enabling%20precise%20control%20of%20emission%20wavelength%20and%20structural%20stability.%20The%20fabricated%20lasers%20exhibited%20successful%20operation%20at%20a%20telecommunication%20C-band.%22%2C%22date%22%3A%222025-05-26%22%2C%22section%22%3A%22%22%2C%22partNumber%22%3A%22%22%2C%22partTitle%22%3A%22%22%2C%22DOI%22%3A%2210.1049%5C%2Fell2.70308%22%2C%22citationKey%22%3A%22%22%2C%22url%22%3A%22%22%2C%22PMID%22%3A%22%22%2C%22PMCID%22%3A%22%22%2C%22ISSN%22%3A%22%22%2C%22language%22%3A%22en%22%2C%22collections%22%3A%5B%22CUVZN8XM%22%2C%22SWQKNFDG%22%2C%22K57RF6FB%22%2C%224LRBSQJK%22%2C%2237EUXLG7%22%5D%2C%22dateModified%22%3A%222025-12-03T07%3A07%3A35Z%22%7D%7D%5D%7D
1.
Kwoen, J., Jung, J., Kakuda, M. & Arakawa, Y. C-band All III-Arsenide InAs Quantum Dot Lasers on InP using Low Indium Composition Partial Capping. Electron. Lett. 61, 1–4 (2025).